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Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxyMIYASHITA, Naoya; ICHIKAWA, Shuhei; OKADA, Yoshitaka et al.Journal of crystal growth. 2009, Vol 311, Num 12, pp 3249-3251, issn 0022-0248, 3 p.Article

Trimethylindium transport studies: the effect of different bubbler designsSMITH, L. M; ODEDRA, R; KINGSLEY, A. J et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 37-41, issn 0022-0248, 5 p.Conference Paper

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article

Control of growth uniformity of III-V bulk crystals grown by contactless liquid phase electroepitaxySTRAK, Pawel; ZYTKIEWICZ, Zbigniew R; KRUKOWSKI, Stanislaw et al.Journal of crystal growth. 2012, Vol 355, Num 1, pp 1-7, issn 0022-0248, 7 p.Article

Controlled growth of exciton-polariton microcavities using in situ spectral reflectivity measurementsBIERMANN, K; CERDA-MENDEZ, E. A; HÖRICKE, M et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 56-59, issn 0022-0248, 4 p.Conference Paper

Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodesCHAPMAN, D. C; VINEIS, C. J; OAKLEY, D. C et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 2365-2369, issn 0022-0248, 5 p.Article

Transition of 3D to 2D growth modes of InAs grown on GaAsMIAO, Z. L; CHUA, S. J; ZHANG, Y. W et al.Applied surface science. 2006, Vol 252, Num 10, pp 3436-3440, issn 0169-4332, 5 p.Article

Free-standing zinc-blende (cubic) GaN layers and substratesNOVIKOV, S. V; STANTON, N. M; CAMPION, R. P et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3964-3967, issn 0022-0248, 4 p.Conference Paper

Vertical conductivity of p-Al_xGa_1-xN/GaN superlattices measured with modified transmission line modelHU, C. Y; WANG, Y. J; XU, K et al.Journal of crystal growth. 2007, Vol 298, pp 815-818, issn 0022-0248, 4 p.Conference Paper

Spontaneously grown GaN and AlGaN nanowiresBERTNESS, K. A; ROSHKO, A; SANFORD, N. A et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 522-527, issn 0022-0248, 6 p.Conference Paper

The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactantsSARNEY, W. L; SVENSSON, S. P; ANDERSON, E. M et al.Journal of crystal growth. 2014, Vol 406, pp 8-11, issn 0022-0248, 4 p.Article

Molecular beam epitaxy growth of InSb_1―xBi_x thin filmsYUXIN SONG; SHUMIN WANG; IVY SAHA ROY et al.Journal of crystal growth. 2013, Vol 378, pp 323-328, issn 0022-0248, 6 p.Conference Paper

Quantitative estimation of density of Bi-induced localized states in GaAs_1―xBi_x grown by molecular beam epitaxyYOSHIMOTO, Masahiro; ITOH, Mizuki; TOMINAGA, Yoriko et al.Journal of crystal growth. 2013, Vol 378, pp 73-76, issn 0022-0248, 4 p.Conference Paper

Semi-analytic solutions for a thermoelastic problem with cubic anisotropyJINBIAO WU; BOHUN, C. Sean; HUAXIONG HUANG et al.Journal of crystal growth. 2008, Vol 310, Num 19, pp 4373-4384, issn 0022-0248, 12 p.Article

Improved GaN-on-Si epitaxial quality by incorporating various Si_xN_y interlayer structuresWANG, Tzu-Yu; OU, Sin-Liang; HORNG, Ray-Hua et al.Journal of crystal growth. 2014, Vol 399, pp 27-32, issn 0022-0248, 6 p.Article

Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layersCHANG, H. W; AKITA, S; MATSUKURA, F et al.Journal of crystal growth. 2014, Vol 401, pp 633-635, issn 0022-0248, 3 p.Conference Paper

HVPE-GaN growth on misoriented ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; GRZEGORY, I et al.Journal of crystal growth. 2014, Vol 403, pp 32-37, issn 0022-0248, 6 p.Conference Paper

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxyHUA LI; SHI LIU; WEBSTER, Preston T et al.Journal of crystal growth. 2013, Vol 378, pp 145-149, issn 0022-0248, 5 p.Conference Paper

Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectorsGU, Y; ZHANG, Y. G; WANG, K et al.Journal of crystal growth. 2013, Vol 378, pp 65-68, issn 0022-0248, 4 p.Conference Paper

Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light sourceOZAKI, N; TAKEUCHI, K; OHKOUCHI, S et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 191-193, issn 0022-0248, 3 p.Conference Paper

Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dotsATKINSON, P; SCHMIDT, O. G.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1815-1818, issn 0022-0248, 4 p.Conference Paper

Computational intelligence applied to the growth of quantum dotsSINGULANI, Anderson P; VILELA, Omar P; AURELIO PACHECO, Marco C et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5063-5065, issn 0022-0248, 3 p.Conference Paper

Electrical properties of undoped and doped MOVPE grown InAsSbKRUG, T; BOTHA, L; SHAMBA, P et al.Journal of crystal growth. 2007, Vol 298, pp 163-167, issn 0022-0248, 5 p.Conference Paper

Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasersMANZ, C; YANG, Q; KIRSTE, L et al.Journal of crystal growth. 2007, Vol 301-302, pp 893-896, issn 0022-0248, 4 p.Conference Paper